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About the College

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  • About the College
  • Faculty
  • Electronic and Electrical Engineering

Faculty - Electronic and Electrical Engineering

  • Associate Professor Semiconductor Device and Circuit
  • SHIN, CHANGHWAN
    Lab Device and Circuit LAB
  • +82-31-290-7694
  • Engineering 1 (23) 2F 23214

Research Interest

Silicon Semiconductor Device, Cache Memory Design, Ultra-low-voltage device design, SRAM Yield Enhancement, Random variation, Device design using Machine-Learning techniques

Education

  • 2011 Ph.D. University of California Berkeley
  • 2006 B.S. Korea University

Experience

  • 2017 ~ Present : Independent Director, Board of Directors, SK hynix
  • 2012 ~ 2018 : Associate/Assistant Professor, University of Seoul
  • 2011 ~ 2012: Senior Engineer, Xilinx Inc. (San Jose, CA, USA)
  • 2010 ~ 2010: IBM Corp. (East Fishkill, NY, USA)

Journal Article

  • (2021)  Abruptly-Switching MoS2-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO2-Based Threshold Switching Device.  IEEE ACCESS.  9, 
  • (2021)  Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor.  IEEE ELECTRON DEVICE LETTERS.  42,  9
  • (2021)  Gate-Stack Engineering to Improve the Performance of 28 nm Low-Power High-K/Metal-Gate Device.  MICROMACHINES.  12,  8
  • (2021)  Experimental study of threshold voltage shift for Si:HfO2 based ferroelectric field effect transistor.  NANOTECHNOLOGY.  32,  37
  • (2021)  Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET.  IEEE ACCESS.  9, 
  • (2021)  Impact of Rapid-Thermal-Annealing Temperature on the Polarization Characteristics of a PZT-Based Ferroelectric Capacitor.  ELECTRONICS.  10,  11
  • (2021)  Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's.  IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.  21,  2
  • (2021)  Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO2/Al2O3-Multilayer-Based Threshold Switching Device.  IEEE TRANSACTIONS ON ELECTRON DEVICES.  68,  3
  • (2021)  Prediction Model for Random Variation in FinFET Induced by Line-Edge-Roughness (LER).  ELECTRONICS.  10,  4
  • (2021)  FBFET (feedback field-effect transistor)-based oscillator for neuromorphic computing.  SEMICONDUCTOR SCIENCE AND TECHNOLOGY.  36,  3
  • (2021)  LER-Induced Random Variation-Immune Effect of Metal-Interlayer-Semiconductor Source/Drain Structure on N-Type Ge Junction less FinFETs.  IEEE TRANSACTIONS ON ELECTRON DEVICES.  68,  3
  • (2021)  Quantitative evaluation of process-induced line-edge roughness in FinFET: Bayesian regression model.  SEMICONDUCTOR SCIENCE AND TECHNOLOGY.  36,  2
  • (2021)  Impact of depolarization electric-field and charge trapping on the coercive voltage of an Si:HfO2-based ferroelectric capacitor.  SEMICONDUCTOR SCIENCE AND TECHNOLOGY.  36,  1
  • (2020)  Recent Studies on Supercapacitors with Next-Generation Structures.  MICROMACHINES.  11,  12
  • (2020)  Effects of Interface Trap on Transient Negative Capacitance Effect: Phase Field Model.  ELECTRONICS.  9,  12
  • (2020)  Trade-off between interfacial charge and negative capacitance effects in the Hf-Zr-Al-O/Hf0.5Zr0.5O2 bilayer system.  SOLID-STATE ELECTRONICS.  174,  -
  • (2020)  Machine Learning (ML)-Based Model to Characterize the Line Edge Roughness (LER)-Induced Random Variation in FinFET.  IEEE ACCESS.  8, 
  • (2020)  MFMIS Negative Capacitance FinFET Design for Improving Drive Current.  ELECTRONICS.  9,  9
  • (2020)  Gate-induced drain leakage (GIDL) in MFMIS and MFIS negative capacitance FinFETs.  CURRENT APPLIED PHYSICS.  20,  11
  • (2020)  Electrical Characteristics of Nanoelectromechanical Relay with Multi-Domain HfO2-Based Ferroelectric Materials.  ELECTRONICS.  9,  8

Honors / Awards

  • Best Teaching Award by Korean Society of Engineering Education (2014)
  • Best Teaching Award by Jungang Daily News (2018)
  • Best Paper in ESSDERC 2011
  • Best Paper in IEEE S3S conference 2009
  • Best student paper in IEEE S3S conference 2009

Conference Paper

  • (2021)  A new approach to estimate the process-induced random variation in current-voltage characteristic of FinFET: Machine-Learning Technique.  한국반도체학술대회 2021.  KOREA, REPUBLIC OF
  • (2021)  Experimental study of boosting effect in metal-ferroelectric-metal capacitor.  한국반도체학술대회 2021.  KOREA, REPUBLIC OF
  • (2021)  Impact of Using HfO2/Al2O3 Multilayer on the Performance of Threshold Switching Device.  한국반도체학술대회 2021.  KOREA, REPUBLIC OF
  • (2021)  Single transistor latch using fully-depleted silicon-on-insulator device.  한국반도체학술대회 2021.  KOREA, REPUBLIC OF
  • (2021)  Study of boosting effect in metal-insulator-ferroelectric-metal capacitor.  NCC 2021.  KOREA, REPUBLIC OF
  • (2020)  High Selectivity를 가진 Ag/Dual-Oxide based Threshold Switching Device 분석.  2020 대한전자공학회 추계학술대회.  KOREA, REPUBLIC OF
  • (2020)  Impact of interface layer on charge trapping in Si:HfO2 based FeFET.  IEEE International Integrated Reliability Workshop (IIRW).  UNITED STATES
  • (2020)  3D Phase-Field Simulation for MFM capacitor.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  A Study on the Bayesian Linear Regression Method in Evaluating the Immunity to Line Edge Roughness in FinFET.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  A study of interface traps of Zr-doped HfO2 thin film in Metal-Insulator-Semiconductor (MIS) structure.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  Bayesian Linear Regression Method for Predicting the Impact of Line Edge Roughness in FinFET.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  Design of FinFET-based 6-T SRAM and Performance Evaluation of Read/Write in Large-scale Memory Array.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  Experimental study of negative capacitance effect on a Metal-Ferroelectric-Insulator-Metal structure.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  Line-Edge-Roughness (LER)에 의한 5nm FinFET의 문턱전압 변화 예측을 위한 인공신경망 모델.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  Nanowire FET와 Nanosheet FET에서의 process-induced random variation 비교 및 분석.  대한전자공학회 하계종합학술대회.  KOREA, REPUBLIC OF
  • (2020)  3D Phase-Field Simulation of Ferroelectric switching.  NANO KOREA 2020.  KOREA, REPUBLIC OF
  • (2020)  Characterization of HfO2/Al2O3 threshold switching device.  NANO KOREA 2020.  KOREA, REPUBLIC OF
  • (2020)  Impact of annealing conditions on the resistive switching characteristics of TiN/HfO2:Al/Si ReRAM devices.  NANO KOREA 2020.  KOREA, REPUBLIC OF
  • (2020)  Impact of bottom electrode’s work function on the characteristics of threshold switching device.  NANO KOREA 2020.  KOREA, REPUBLIC OF
  • (2020)  Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices.  IEEE International Memory Workshop.  UNITED STATES