집속이온빔장치3 (FIB3)
| 사 진 |
 |
|---|---|
| 영문명/단축명 | Focused Ion Beam 3 / FIB3 |
| 모델명 |
NX2000 |
| 설치장소 | 미세구조분석실 / [81B104]집속이온빔(FIB) |
| 제작사 | HITACHI |
| 도입년도/가격 | 2018.4월 / 1,200,000,000원 |
| 담당자 / 연락처 / e-mail | 권미리내(Kwon Mirinae) / 031-299-6732 / kmrn1205@skku.edu |
♦ Features
• High contrast, real-time SEM end point detection allows ultrathin TEM sample preparation of sub 20 nm devices
• Micro sampling and high precision positioning mechanism enable sample orientation control and uniformly-thick lamellas
• Triple Beam system: triple beam configuration for Ga FIB-induced damage reduction
♦ Specification
• FIB
- Accelerating voltage: 0.5~30kV
- Maximum beam current: 100nA
- Resolution: 4nm @30kV/ 60nm @2kV
• SEM
- Accelerating voltage: 0.5~30kV
- Resolution: 2.8nm @5kV/ 3.5nm @1kV
• Ar
- Accelerating voltage: 0.5~2kV
- Maximum beam current: 20nA or more @ 1kV
- Si etching rate: 10nm. Min @1kV