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분석실 안내

연구장비 소개

분석실 안내

연구장비 소개

주사전자현미경6(SEM6)

주사전자현미경6
사진
영문명/단축명 Field Emission Scanning Electron Microscope 6 (EDS/EBSD)/FESEM 6 (EDS/EBSD)
모델명 JSM-IT800
설치장소 미세구조분석실//[81603]공동기기원실험실
제작사 JEOL
도입년도/가격 2022년 1월/480,000,000
담당자/연락처/e-mail 이혜림(Lee Hyerim) / 031-299-6742 / hllee@skku.edu

 

♦ Features

 

• JSM-IT800 accommodates four detectors(UED, UHD, BED, SED)

• Selecting observation conditions and detectors suitable for your applications enables you to acquire characteristics SEM Images (compositional, topographic, morphological, crystalline information)

• In-lens Schottky Plus FEG generates electrons can be efficiently and also provides high resolution images at low accelerating voltage

• SEM Images with high S/N at low accelerating voltage

• When using the UHD mode to detect the signals, can reduce the charging effects

• It is suitable for observing the non-conductive specimen with nano-structure and easily damaged by electron beam(minimize sample damage)

• Single nm steps are clearly observed on the particle surface

 

♦ Additional Options

 

• EDS Detector: ULTIM MAX 170

High spatial resolution and speed within several minutes by 170 mm2  Area detector (Quantitative analysis at >400,000 cps  , Mapping at >1,000,000 cps)

Minimise sample damage

Minimise sample contamination

Provide more detailed analysis

• EDS Detector: ULTIM EXTREAM(windowless type EDS)

The Ultim Extreme is a windowless 100 mm2 and maximise sensitivity and spatial resolution

Fantastic sensitivity to light elements such as nitrogen

Low kV analysis reducing/eliminating sample damage and charging

Fast data collection with higher count rates compared to traditional detectors

• IT-800 EBSD

Symmetry S2’s fibre optics deliver 2-3 times better sensitivity than standard detector

Symmetry S2: 3100pps(39min)

Standard: 1350pps(1.5hrs)

High quality and faster diffraction patterns enable effective materials characterization in a short time

Re-analysis is possible by required EBSD pattern

From EBSD we obtain?

* Grain size, Grain boundary characterisation, Phase distribution, Texture(or crystallographic preferred orientation), Orientation data, Strain and deformation

 

♦ Specification

 

• Resolution: 0.7nm(20kV), 1.3nm(1kV), 3.0nm(15kV, 5nA, WD10mm)

• Magnification: x10 to x2,000,000(128 x 96mm) 

• Acc. Voltage: 0.01 ~ 30kV

• probe current

- A few pA to 300nA(30kV)

- A few pA to 100nA(5kV)

• Detector(Standard)

- SED(Secondary electron detector)

- UED(Upper electron detector)

• Electron gun: In-lens Schottky Plus